Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Конфигурация диода | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) (на диод) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Рабочая температура - Переход | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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MSRTA200160DDIODE MODULE GEN PURP 1600V 200A GeneSiC Semiconductor |
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![]() Таблицы данных |
- | Module | Bulk | Active | 1 Pair Series Connection | Standard | 1600 V | 200A | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | -55°C ~ 150°C | - | - | Chassis Mount | - |
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MSRTA200140DDIODE MODULE GEN PURP 1400V 200A GeneSiC Semiconductor |
0 |
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![]() Таблицы данных |
- | Module | Bulk | Active | 1 Pair Series Connection | Standard | 1400 V | 200A | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1400 V | -55°C ~ 150°C | - | - | Chassis Mount | - |
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MSRTA200160ADDIODE MOD GP 1600V 200A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Active | 1 Pair Series Connection | Standard | 1600 V | 200A | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA200120DIODE MOD GP 1200V 100A 3TOWER GeneSiC Semiconductor |
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![]() Таблицы данных |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 1200 V | 100A | 2.6 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 1200 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA200120RDIODE MOD GP 1200V 100A 3TOWER GeneSiC Semiconductor |
0 |
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![]() Таблицы данных |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 1200 V | 100A | 2.6 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 1200 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA20020DIODE MODULE GP 200V 100A 3TOWER GeneSiC Semiconductor |
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![]() Таблицы данных |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 200 V | 100A | 1.3 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 200 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA20020RDIODE MODULE GP 200V 100A 3TOWER GeneSiC Semiconductor |
0 |
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![]() Таблицы данных |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 200 V | 100A | 1.3 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 200 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA20040DIODE MODULE GP 400V 100A 3TOWER GeneSiC Semiconductor |
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![]() Таблицы данных |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 400 V | 100A | 1.3 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 400 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA20040RDIODE MODULE GP 400V 100A 3TOWER GeneSiC Semiconductor |
0 |
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![]() Таблицы данных |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 400 V | 100A | 1.3 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 400 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA20060DIODE MODULE GP 600V 100A 3TOWER GeneSiC Semiconductor |
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![]() Таблицы данных |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 600 V | 100A | 1.7 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 600 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |