Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Конфигурация диода | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) (на диод) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Рабочая температура - Переход | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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MUR40060CTRDIODE MODULE GP 600V 200A 2TOWER GeneSiC Semiconductor |
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![]() Таблицы данных |
- | Twin Tower | Bulk | Active | 1 Pair Common Anode | Standard | 600 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
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MURT40010DIODE MODULE GP 100V 200A 3TOWER GeneSiC Semiconductor |
0 |
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![]() Таблицы данных |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 100 V | 200A | 1.3 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 125 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURT40010RDIODE MODULE GP 100V 200A 3TOWER GeneSiC Semiconductor |
0 |
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![]() Таблицы данных |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 100 V | 200A | 1.3 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 125 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURT40020DIODE MODULE GP 200V 200A 3TOWER GeneSiC Semiconductor |
0 |
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![]() Таблицы данных |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 200 V | 200A | 1.3 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 125 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURT40020RDIODE MODULE GP 200V 200A 3TOWER GeneSiC Semiconductor |
0 |
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![]() Таблицы данных |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 200 V | 200A | 1.3 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 125 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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GB2X100MPS12-227DIODE MOD SIC 1200V 185A SOT-227 GeneSiC Semiconductor |
0 |
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![]() Таблицы данных |
SiC Schottky MPS™ | SOT-227-4, miniBLOC | Tube | Obsolete | 2 Independent | SiC (Silicon Carbide) Schottky | 1200 V | 185A (DC) | 1.8 V @ 100 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 1200 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
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MBRT600100DIODE MOD SCHOT 100V 300A 3TOWER GeneSiC Semiconductor |
0 |
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![]() Таблицы данных |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Schottky | 100 V | 300A | 880 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MBRT600100RDIODE MOD SCHOT 100V 300A 3TOWER GeneSiC Semiconductor |
0 |
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![]() Таблицы данных |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Schottky | 100 V | 300A | 880 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MBRT60020DIODE MOD SCHOTT 20V 300A 3TOWER GeneSiC Semiconductor |
0 |
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![]() Таблицы данных |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Schottky | 20 V | 300A | 750 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MBRT60020RDIODE MOD SCHOTT 20V 300A 3TOWER GeneSiC Semiconductor |
0 |
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![]() Таблицы данных |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Schottky | 20 V | 300A | 750 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |