Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
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FES8DT/45DIODE GEN PURP 200V 8A TO220AC Vishay General Semiconductor - Diodes Division |
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- | TO-220-2 | Tube | Obsolete | Standard | 200 V | 8A | 950 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 150°C |
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FES8GT/45DIODE GEN PURP 400V 8A TO220AC Vishay General Semiconductor - Diodes Division |
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- | TO-220-2 | Tube | Obsolete | Standard | 400 V | 8A | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 150°C |
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FES8JT/45DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
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- | TO-220-2 | Tube | Obsolete | Standard | 600 V | 8A | 1.5 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 150°C |
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MBR10H100/45DIODE SCHOTTKY 100V 10A TO220-3 Vishay General Semiconductor - Diodes Division |
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- | TO-220-3 | Tube | Obsolete | Schottky | 100 V | 10A | 770 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4.5 µA @ 100 V | - | - | - | Through Hole | TO-220-3 | -65°C ~ 175°C |
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MBR760/45DIODE SCHOTTKY 60V 7.5A TO220AC Vishay General Semiconductor - Diodes Division |
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- | TO-220-2 | Tube | Obsolete | Schottky | 60 V | 7.5A | 750 mV @ 7.5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | - | - | - | Through Hole | TO-220AC | -65°C ~ 150°C |
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MBRB10H100/45DIODE SCHOTTKY 100V 10A TO263AB Vishay General Semiconductor - Diodes Division |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Schottky | 100 V | 10A | 770 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4.5 µA @ 100 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -65°C ~ 175°C |
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RGL41B/1DIODE GEN PURP 100V 1A DO213AB Vishay General Semiconductor - Diodes Division |
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![]() Таблицы данных |
SUPERECTIFIER® | DO-213AB, MELF (Glass) | Tape & Reel (TR) | Active | Standard | 100 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 100 V | 15pF @ 4V, 1MHz | - | - | Surface Mount | DO-213AB | -65°C ~ 175°C |
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RGL41D/1DIODE GEN PURP 200V 1A DO213AB Vishay General Semiconductor - Diodes Division |
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![]() Таблицы данных |
SUPERECTIFIER® | DO-213AB, MELF (Glass) | Tape & Reel (TR) | Active | Standard | 200 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 200 V | 15pF @ 4V, 1MHz | - | - | Surface Mount | DO-213AB | -65°C ~ 175°C |
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RGL41G/1DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
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![]() Таблицы данных |
SUPERECTIFIER® | DO-213AB, MELF (Glass) | Tape & Reel (TR) | Active | Standard | 400 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 400 V | 15pF @ 4V, 1MHz | - | - | Surface Mount | DO-213AB | -65°C ~ 175°C |
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RGL41M/1DIODE GEN PURP 1KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
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![]() Таблицы данных |
SUPERECTIFIER® | DO-213AB, MELF (Glass) | Tape & Reel (TR) | Active | Standard | 1000 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | - | - | Surface Mount | DO-213AB | -65°C ~ 175°C |