Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
APT60DQ100BGDIODE GEN PURP 1KV 60A TO247 Microchip Technology |
244 |
|
![]() Таблицы данных |
- | TO-247-2 | Tube | Active | Standard | 1000 V | 60A | 3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 255 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
![]() |
APT40DQ100BGDIODE GEN PURP 1KV 40A TO247 Microchip Technology |
392 |
|
![]() Таблицы данных |
- | TO-247-2 | Tube | Active | Standard | 1000 V | 40A | 3 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
![]() |
1N649-1/TRDIODE GEN PURP 600V 400MA DO35 Microchip Technology |
206 |
|
![]() Таблицы данных |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 400mA | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 600 V | - | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
![]() |
APT15D100BGDIODE GEN PURP 1KV 15A TO247 Microchip Technology |
283 |
|
![]() Таблицы данных |
- | TO-247-2 | Tube | Active | Standard | 1000 V | 15A | 2.3 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 260 ns | 250 µA @ 1000 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
![]() |
APT30D40BGDIODE GP 400V 30A TO247 Microchip Technology |
345 |
|
![]() Таблицы данных |
- | TO-247-2 | Tube | Active | Standard | 400 V | 30A | 1.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 32 ns | 250 µA @ 400 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
![]() |
UPS840/TR13DIODE SCHOTTKY 40V 8A POWERMITE3 Microchip Technology |
1,835 |
|
![]() Таблицы данных |
- | Powermite®3 | Tape & Reel (TR) | Active | Schottky | 40 V | 8A | 450 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 40 V | - | - | - | Surface Mount | Powermite 3 | -55°C ~ 125°C |
|
JANTX1N3595-1DIODE GEN PURP 125V 150MA DO35 Microchip Technology |
174 |
|
![]() Таблицы данных |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 125 V | 150mA | 920 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | - | Military | MIL-S-19500-241 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
1N4245DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
264 |
|
![]() Таблицы данных |
- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 200 V | - | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
![]() |
MSC010SDA070BDIODE SIL CARBIDE 700V 24A TO247 Microchip Technology |
122 |
|
![]() Таблицы данных |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 24A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 700 V | 353pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
|
MSC010SDA120KDIODE SIL CARB 1.2KV 10A TO220 Microchip Technology |
178 |
|
![]() Таблицы данных |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-220-2 | - |