Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
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GB01SLT06-214DIODE SIL CARB 650V 1A DO214AA GeneSiC Semiconductor |
6,966 |
|
![]() Таблицы данных |
SiC Schottky MPS™ | DO-214AA, SMB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1A | 2 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 6.5 V | 76pF @ 1V, 1MHz | - | - | Surface Mount | DO-214AA | -55°C ~ 175°C |
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GB01SLT12-214DIODE SIL CARBIDE 1.2KV 2.5A SMB GeneSiC Semiconductor |
575 |
|
![]() Таблицы данных |
SiC Schottky MPS™ | DO-214AA, SMB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 2.5A | 1.8 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 69pF @ 1V, 1MHz | - | - | Surface Mount | DO-214AA (SMB) | -55°C ~ 175°C |
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GB02SLT12-214DIODE SIL CARB 1.2KV 2A DO214AA GeneSiC Semiconductor |
12,092 |
|
![]() Таблицы данных |
SiC Schottky MPS™ | DO-214AA, SMB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 2A | 1.8 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 131pF @ 1V, 1MHz | - | - | Surface Mount | DO-214AA | -55°C ~ 175°C |
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GD10MPS12EDIODE SIL CARB 1.2KV 29A TO252-2 GeneSiC Semiconductor |
9,841 |
|
![]() Таблицы данных |
SiC Schottky MPS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 29A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 1200 V | 367pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
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GD10MPS12ADIODE SIL CARB 1.2KV 25A TO220-2 GeneSiC Semiconductor |
3,529 |
|
![]() Таблицы данных |
SiC Schottky MPS™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 25A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 1200 V | 367pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
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GD05MPS17J-TR1700V 5A TO-247-2 SIC SCHOTTKY M GeneSiC Semiconductor |
1,286 |
|
![]() Таблицы данных |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1700 V | 15A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 361pF @ 1V, 1MHz | - | - | Surface Mount | TO-263-7 | -55°C ~ 175°C |
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GD05MPS17HDIODE SIL CARB 1.7KV 15A TO247-2 GeneSiC Semiconductor |
993 |
|
![]() Таблицы данных |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 15A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 361pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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GD10MPS17HDIODE SIL CARB 1.7KV 26A TO247-2 GeneSiC Semiconductor |
780 |
|
![]() Таблицы данных |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 26A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 721pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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GD60MPS06HDIODE SIL CARB 650V 82A TO247-2 GeneSiC Semiconductor |
849 |
|
![]() Таблицы данных |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 82A | 1.8 V @ 60 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | 1463pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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GAP3SLT33-214DIODE SIC 3.3KV 300MA DO214AA GeneSiC Semiconductor |
6,598 |
|
![]() Таблицы данных |
SiC Schottky MPS™ | DO-214AA, SMB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 3300 V | 300mA | 2.2 V @ 300 mA | - | 0 ns | 10 µA @ 3300 V | 42pF @ 1V, 1MHz | - | - | Surface Mount | DO-214AA | -55°C ~ 175°C |