Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Программируемый | Управляемая конфигурация | Тип канала | Количество драйверов | Тип затвора | Напряжение - Питание | Логическое напряжение - VIL, VIH | Ток - пиковый выход (источник, сток) | Тип входа | Напряжение высокой стороны - макс. (бутстреп) | Время нарастания/спада (тип.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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IRS2304PBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
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![]() Таблицы данных |
- | 8-DIP (0.300", 7.62mm) | Tube | Obsolete | Not Verified | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.7V, 2.3V | 290mA, 600mA | Non-Inverting | 600 V | 70ns, 35ns | -40°C ~ 150°C (TJ) | - | - | Through Hole | 8-PDIP |
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IRS2186PBFIC GATE DRVR HI/LOW SIDE 8DIP Infineon Technologies |
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![]() Таблицы данных |
- | 8-DIP (0.300", 7.62mm) | Tube | Obsolete | Not Verified | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | 600 V | 22ns, 18ns | -40°C ~ 150°C (TJ) | - | - | Through Hole | 8-PDIP |
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IRS2001PBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
0 |
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![]() Таблицы данных |
- | 8-DIP (0.300", 7.62mm) | Tube | Obsolete | Not Verified | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 200 V | 70ns, 35ns | -40°C ~ 150°C (TJ) | - | - | Through Hole | 8-PDIP |
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IRS2101PBFIC GATE DRVR HI/LOW SIDE 8DIP Infineon Technologies |
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![]() Таблицы данных |
- | 8-DIP (0.300", 7.62mm) | Tube | Obsolete | Not Verified | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600 V | 70ns, 35ns | -40°C ~ 150°C (TJ) | - | - | Through Hole | 8-PDIP |
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IRS2103PBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
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![]() Таблицы данных |
- | 8-DIP (0.300", 7.62mm) | Tube | Discontinued at Digi-Key | Not Verified | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 600 V | 70ns, 35ns | -40°C ~ 150°C (TJ) | - | - | Through Hole | 8-PDIP |
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IRS2118PBFIC GATE DRVR HIGH-SIDE 8DIP Infineon Technologies |
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![]() Таблицы данных |
- | 8-DIP (0.300", 7.62mm) | Tube | Obsolete | Not Verified | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 290mA, 600mA | Inverting | 600 V | 75ns, 35ns | -40°C ~ 150°C (TJ) | - | - | Through Hole | 8-PDIP |
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IRS2118SPBFIC GATE DRVR HIGH-SIDE 8SOIC Infineon Technologies |
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![]() Таблицы данных |
- | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | Not Verified | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 290mA, 600mA | Inverting | 600 V | 75ns, 35ns | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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IRS2117SPBFIC GATE DRVR HIGH-SIDE 8SOIC Infineon Technologies |
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![]() Таблицы данных |
- | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | Not Verified | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 290mA, 600mA | Non-Inverting | 600 V | 75ns, 35ns | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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IRS2003PBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
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![]() Таблицы данных |
- | 8-DIP (0.300", 7.62mm) | Tube | Obsolete | Not Verified | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 200 V | 70ns, 35ns | -40°C ~ 150°C (TJ) | - | - | Through Hole | 8-PDIP |
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IRS2001SPBFIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
0 |
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![]() Таблицы данных |
- | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | Not Verified | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 200 V | 70ns, 35ns | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |