Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Конфигурация | Характеристика FET | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Входная емкость (Ciss) (Макс.) @ Vds | Мощность - макс. | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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APTM50HM75FTGMOSFET 4N-CH 500V 46A SP4 Microchip Technology |
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![]() Таблицы данных |
- | SP4 | Bulk | Active | MOSFET (Metal Oxide) | 4 N-Channel (Full Bridge) | - | 500V | 46A | 90mOhm @ 23A, 10V | 5V @ 2.5mA | 123nC @ 10V | 5600pF @ 25V | 357W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
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APTM20DUM08TGMOSFET 2N-CH 200V 208A SP4 Microchip Technology |
0 |
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![]() Таблицы данных |
- | SP4 | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 200V | 208A | 10mOhm @ 104A, 10V | 5V @ 5mA | 280nC @ 10V | 14400pF @ 25V | 781W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
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APTM20HM20STGMOSFET 4N-CH 200V 89A SP4 Microchip Technology |
0 |
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![]() Таблицы данных |
- | SP4 | Bulk | Active | MOSFET (Metal Oxide) | 4 N-Channel (Full Bridge) | - | 200V | 89A | 24mOhm @ 44.5A, 10V | 5V @ 2.5mA | 112nC @ 10V | 6850pF @ 25V | 357W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
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APTM100H35FT3GMOSFET 4N-CH 1000V 22A SP3 Microchip Technology |
0 |
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![]() Таблицы данных |
- | SP3 | Bulk | Active | MOSFET (Metal Oxide) | 4 N-Channel (Full Bridge) | - | 1000V (1kV) | 22A | 420mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | 390W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP3 |
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APTC80TA15PGMOSFET 6N-CH 800V 28A SP6-P Microchip Technology |
0 |
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![]() Таблицы данных |
- | SP6 | Bulk | Active | MOSFET (Metal Oxide) | 6 N-Channel (3-Phase Bridge) | - | 800V | 28A | 150mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | 277W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6-P |
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APTC80TDU15PGMOSFET 6N-CH 800V 28A SP6-P Microchip Technology |
0 |
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![]() Таблицы данных |
- | SP6 | Bulk | Active | MOSFET (Metal Oxide) | 6 N-Channel (3-Phase Bridge) | - | 800V | 28A | 150mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | 277W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6-P |
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APTM50HM75STGMOSFET 4N-CH 500V 46A SP4 Microchip Technology |
0 |
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![]() Таблицы данных |
- | SP4 | Bulk | Active | MOSFET (Metal Oxide) | 4 N-Channel (Full Bridge) | - | 500V | 46A | 90mOhm @ 23A, 10V | 5V @ 2.5mA | 123nC @ 10V | 5600pF @ 25V | 357W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
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APTC60AM35SCTGMOSFET 2N-CH 600V 72A SP4 Microchip Technology |
0 |
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![]() Таблицы данных |
- | SP4 | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 600V | 72A | 35mOhm @ 36A, 10V | 3.9V @ 2mA | 518nC @ 10V | 14000pF @ 25V | 416W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
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MSCSM120HM50CT3AGMOSFET 4N-CH 1200V 55A SP3F Microchip Technology |
0 |
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![]() Таблицы данных |
- | Module | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel | - | 1200V (1.2kV) | 55A (Tc) | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137nC @ 20V | 1990pF @ 1000V | 245W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP3F |
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APTM20AM10STGMOSFET 2N-CH 200V 175A SP4 Microchip Technology |
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![]() Таблицы данных |
- | SP4 | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 200V | 175A | 12mOhm @ 87.5A, 10V | 5V @ 5mA | 224nC @ 10V | 13700pF @ 25V | 694W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |